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1

A two-dimensional physically-based current model for deep-submicrometer SOI dynamic threshold-voltage MOSFET

Ru Huang, Xing Zhang, RuQi Han, YangYuan Wang

Journal:

Solid-State Electronics

Année:

2003

Langue:

english

Fichier:

PDF, 228 KB

english, 2003

2

Fabrication and characteristics of ZnO thin films deposited by RF sputtering on plastic substrates for flexible display

Han, DeDong, Wang, Yi, Zhang, ShengDong, Sun, Lei, Han, RuQi, Matsumoto, Satoru, Ino, Yuji

Journal:

SCIENCE CHINA Information Sciences

Année:

2012

Langue:

english

Fichier:

PDF, 279 KB

english, 2012

3

Simulation of inhomogeneous strain in Ge-Si core-shell nanowires

Yuhui He, Yuning Zhao, Chun Fan, Xiaoyan Liu, Ruqi Han

Journal:

Frontiers of Electrical and Electronic Engineering

Année:

2009

Langue:

english

Fichier:

PDF, 278 KB

english, 2009

4

[IEEE Electrical Performance of Electronic Packaging - Austin, TX (2004.10.27-2004.10.27)] Electrical Performance of Electronic Packaging IWCE-04 - Simulation of Si and Ge UTB MOSFETs using Monte Carlo method based on the quantum Boltzmann equation

Gang Du,, Xiaoyan Liu,, Zhiliang Xia,, Ruqi Han,

Année:

2004

Langue:

english

Fichier:

PDF, 116 KB

english, 2004

5

Multiple Genetic Variants Associated with Primary Biliary Cirrhosis in a Han Chinese Population

Dong, Ming, Li, Jinxin, Tang, Ruqi, Zhu, Ping, Qiu, Fang, Wang, Chan, Qiu, Jie, Wang, Lan, Dai, Yaping, Xu, Ping, Gao, Yueqiu, Han, Chongxu, Wang, Yongzhong, Wu, Jian, Wu, Xudong, Zhang, Kui, Dai, Na,

Journal:

Clinical Reviews in Allergy & Immunology

Année:

2015

Langue:

english

Fichier:

PDF, 165 KB

english, 2015

6

The impact of line edge roughness on the stability of a FinFET SRAM

Yu, Shimeng, Zhao, Yuning, Du, Gang, Kang, Jinfeng, Han, Ruqi, Liu, Xiaoyan

Journal:

Semiconductor Science and Technology

Année:

2009

Langue:

english

Fichier:

PDF, 1.51 MB

english, 2009

7

[IEEE 6th International Conference on Solid-State and IC Technology - Shanghai, China (22-25 Oct. 2001)] 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) - Structural and electrical properties of CeO/sub 2//Si with nitrided interfacial layer by nitrogen ion beam bombardment

Jinfeng Kang,, Xiaoyan Liu,, Ruqi Han,, Yangyuan Wang,, Lian, G.J., Kun Xun,, Yu, D.P., Xiong, G.C., Wu, S.C., Wang, Y.G.

Année:

2001

Langue:

english

Fichier:

PDF, 249 KB

english, 2001

8

Different interdiffusion characteristics between AgYBa2Cu3O7−x and AlYBa2Cu3O7−x contact interfaces

Kang Jinfeng, Chen Xin, Wang Youxiang, Han Ruqi, Xiong Guangcheng, Lian Guijun, Li Jie, Wu Sicheng

Journal:

Solid State Communications

Année:

1995

Langue:

english

Fichier:

PDF, 298 KB

english, 1995

9

Studies of Ti- and Ni-germanide Schottky contacts on n-Ge(1 0 0) substrates

Dedong Han, Yi Wang, Dayu Tian, Wei Wang, Xiaoyan Liu, Jinfeng Kang, Ruqi Han

Journal:

Microelectronic Engineering

Année:

2005

Langue:

english

Fichier:

PDF, 175 KB

english, 2005

10

Time-dependent transport: Time domain recursively solving NEGF technique

Danqiong Hou, Yuhui He, Xiaoyan Liu, Jinfeng Kang, Jie Chen, Ruqi Han

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Année:

2006

Langue:

english

Fichier:

PDF, 184 KB

english, 2006

11

Carrier effective mobilities in germanium MOSFET inversion layer investigated by Monte Carlo simulation

Zhiliang Xia, Gang Du, Xiaoyan Liu, Jinfeng Kang, Ruqi Han

Journal:

Solid-State Electronics

Année:

2005

Langue:

english

Fichier:

PDF, 144 KB

english, 2005

12

A novel hydrodynamic model for nanoscale devices simulation

Enfeng Liu, Ruqi Han, Erping Li, Ping Bai

Journal:

Microelectronics Journal

Année:

2003

Langue:

english

Fichier:

PDF, 425 KB

english, 2003

13

Direct tunneling current model for MOS devices with ultra-thin gate oxide including quantization effect and polysilicon depletion effect

Xiaoyan Liu, Jinfeng Kang, Ruqi Han

Journal:

Solid State Communications

Année:

2003

Langue:

english

Fichier:

PDF, 318 KB

english, 2003

14

The influence of tunneling effect and inversion layer quantization effect on threshold voltage of deep submicron MOSFETs

Xiaoyan Liu, Jinfeng Kang, Xudong Guan, Ruqi Han, Yangyuan Wang

Journal:

Solid-State Electronics

Année:

2000

Langue:

english

Fichier:

PDF, 158 KB

english, 2000

15

Analytical modeling for the collector current in SOI gate-controlled hybrid transistor

Ru Huang, Yang Yuan Wang, RuQi Han

Journal:

Solid-State Electronics

Année:

1996

Langue:

english

Fichier:

PDF, 300 KB

english, 1996

16

Interfacial and structural characteristics of CeO2 films on silicon with a nitrided interface formed by nitrogen-ion-beam bombardment

Jinfeng Kang, Kun Xun, Xiaoyan Liu, Ruqi Han, Yangyuan Wang, D.P Yu, G.J Lian, G.C Xiong, S.C Wu

Journal:

Thin Solid Films

Année:

2002

Langue:

english

Fichier:

PDF, 1.57 MB

english, 2002

17

Crystal-orientation controlled epitaxial CeO2 dielectric thin films on Si(100) substrates using pulsed laser deposition

Jinfeng Kang, Xiaoyan Liu, Guijun Lian, Zhaohui Zhang, Guangcheng Xiong, Xudong Guan, Ruqi Han, Yangyuan Wang

Journal:

Microelectronic Engineering

Année:

2001

Langue:

english

Fichier:

PDF, 146 KB

english, 2001

18

Improved sensing scheme for FeRAM

Jinghua Zhang, Jinfeng Kang, Shuzuo Lou, Meng Liu, Changhai Lin, Xiaoyan Liu, Ruqi Han

Journal:

Microelectronic Engineering

Année:

2003

Langue:

english

Fichier:

PDF, 212 KB

english, 2003

19

Electrical properties of Al2O3 gate dielectrics

Changhai Lin, Jinfeng Kang, Dedong Han, Dayu Tian, Wei Wang, Jinghua Zhang, Meng Liu, Xiaoyan Liu, Ruqi Han

Journal:

Microelectronic Engineering

Année:

2003

Langue:

english

Fichier:

PDF, 119 KB

english, 2003

20

A MOS-based behavioral macro-model for ferroelectric capacitors

Meng Liu, Jinfeng Kang, Jinghua Zhang, Xiaoyan Liu, Ruqi Han

Journal:

Microelectronic Engineering

Année:

2003

Langue:

english

Fichier:

PDF, 171 KB

english, 2003

21

Engineering oxide resistive switching materials for memristive device application

Lifeng Liu, Bing Chen, Bin Gao, Feifei Zhang, Yuansha Chen, Xiaoyan Liu, Yi Wang, Ruqi Han, Jinfeng Kang

Journal:

Applied Physics A: Materials Science & Processing

Année:

2011

Langue:

english

Fichier:

PDF, 705 KB

english, 2011

22

Fabrication and characteristics of ZnO MOS capacitors with high-KHfO2gate dielectrics

DeDong Han, Yi Wang, ShengDong Zhang, Lei Sun, JinFeng Kang, XiaoYan Liu, Gang Du, LiFeng Liu, RuQi Han

Journal:

Science China Technological Sciences

Année:

2010

Langue:

english

Fichier:

PDF, 648 KB

english, 2010

23

High frequency performance of nano-scale ultra-thin-body Schottky-barrier n-MOSFETs

Gang Du, XiaoYan Liu, RuQi Han

Journal:

SCIENCE CHINA Information Sciences

Année:

2011

Langue:

english

Fichier:

PDF, 585 KB

english, 2011

24

Reliability characteristics of high-K gate dielectrics HfO2 in metal-oxide semiconductor capacitors

Dedong Han, Jinfeng Kang, Changhai Lin, Ruqi Han

Journal:

Microelectronic Engineering

Année:

2003

Langue:

english

Fichier:

PDF, 146 KB

english, 2003

25

The distribution of density of gap states for phosphorus doped amorphous silicon measured by DLTS

Du Yongchang, Zhang Yufeng, Yang Datong, Zhang Guanghua, Han Ruqi

Journal:

Journal of Electronics (China)

Année:

1985

Langue:

english

Fichier:

PDF, 226 KB

english, 1985

26

Implementation and characterization of self-aligned double-gate TFT with thin channel and thick source/drain

Shengdong Zhang, Ruqi Han, Sin, J.K.O., Mansun Chan

Journal:

IEEE Transactions on Electron Devices

Année:

2002

Langue:

english

Fichier:

PDF, 357 KB

english, 2002

27

Reduction of off-current in self-aligned double-gate TFT with mask-free symmetric LDD

Shengdong Zhang, Ruqi Han, Sin, J.K.O., Mansun Chan

Journal:

IEEE Transactions on Electron Devices

Année:

2002

Langue:

english

Fichier:

PDF, 248 KB

english, 2002

28

A viable self-aligned bottom-gate MOS transistor technology for deep submicron 3-D SRAM

Shengdong Zhang, Chan, A.C.K., Ruqi Han, Ru Huang, Xiaoyan Liu, Yangyuan Wang, Ko, P.K., Mansun Chan

Journal:

IEEE Transactions on Electron Devices

Année:

2003

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2003

29

A self-aligned, electrically separable double-gate MOS transistor technology for dynamic threshold voltage application

Shengdong Zhang, Xinnan Lin, Ru Huang, Ruqi Han, Mansun Chan

Journal:

IEEE Transactions on Electron Devices

Année:

2003

Langue:

english

Fichier:

PDF, 353 KB

english, 2003

30

Monte Carlo simulation of p- and n-channel GOI MOSFETs by solving the quantum Boltzmann equation

Gang Du, Xiaoyan Liu, Zhiliang Xia, Jinfeng Kang, Yi Wang, Ruqi Han, HongYu Yu, Dim-Lee Kwong

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 894 KB

english, 2005

31

Impact of Line-Edge Roughness on Double-Gate Schottky-Barrier Field-Effect Transistors

Shimeng Yu, Yuning Zhao, Lang Zeng, Gang Du, Jinfeng Kang, Ruqi Han, Xiaoyan Liu

Journal:

IEEE Transactions on Electron Devices

Année:

2009

Langue:

english

Fichier:

PDF, 1.24 MB

english, 2009

32

Performance Evaluation of GaAs–GaP Core–Shell-Nanowire Field-Effect Transistors

Yuhui He, Yuning Zhao, Chun Fan, Jinfeng Kang, Ruqi Han, Xiaoyan Liu

Journal:

IEEE Transactions on Electron Devices

Année:

2009

Langue:

english

Fichier:

PDF, 650 KB

english, 2009

33

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

Bin Gao, Bing Sun, Haowei Zhang, Lifeng Liu, Xiaoyan Liu, Ruqi Han, Jinfeng Kang, Bin Yu

Journal:

IEEE Electron Device Letters

Année:

2009

Langue:

english

Fichier:

PDF, 282 KB

english, 2009

34

Influence of sputtering power on properties of ZnO thin films fabricated by RF sputtering in room temperature

DeDong Han, Yi Wang, ShengDong Zhang, Lei Sun, RuQi Han, Satoru Matsumoto, Yuji Ino

Journal:

SCIENCE CHINA Information Sciences

Année:

2012

Langue:

english

Fichier:

PDF, 313 KB

english, 2012

35

[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Self-consistent simulation of PRAM with comprehensive physical models

Song, Decheng, Liu, Xiaoyan, Du, Gang, Han, Ruqi, Kang, Jinfeng

Année:

2010

Langue:

english

Fichier:

PDF, 562 KB

english, 2010

36

The electron relaxation and photoluminescence decay of the a-Si:H

Ruqi Han, K.L. Ngai, Xudong Guan, J. Ruvalds

Journal:

Journal of Non-Crystalline Solids

Année:

1987

Langue:

english

Fichier:

PDF, 120 KB

english, 1987

37

[IEEE 2010 Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2010.06.13-2010.06.14)] 2010 Silicon Nanoelectronics Workshop - Variability induced by Line edge roughness in silicon on thin box (SOTB) MOSFETs

Yang, Yunxiang, Liu, Xiaoyan, Du, Gang, Han, Ruqi

Année:

2010

Langue:

english

Fichier:

PDF, 435 KB

english, 2010

38

[ECS ISTC/CSTIC 2009 (CISTC) - Shanghai, China (March 19 - March 20, 2009)] ECS Transactions - Characteristic Variations Induced by Random Fluctuation of Source/Drain Lateral Distribution Dopant in Nano-Scale UTB SOI MOSFET

Du, Linfeng, Deng, Hui, Du, Gang, Han, Ruqi, Zhang, Shengdong

Année:

2009

Langue:

english

Fichier:

PDF, 400 KB

english, 2009

39

[IEEE 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. - Beijing, China (Oct. 18-21, 2004)] Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. - Novel Schottky barrier MOSFET with dual-layer silicide source/drain structure

Dingyu Li,, Lei Sun,, Zinliang Xia,, Shengdong Zhang,, Xiaoyan Liu,, Jinfeng Kang,, Ruqi Han,

Année:

2004

Langue:

english

Fichier:

PDF, 807 KB

english, 2004

40

Simulation of carrier transport in heterostructures using the 2D self-consistent full-band ensemble Monte Carlo method

Kangliang, Wei, Xiaoyan, Liu, Gang, Du, Ruqi, Han

Journal:

Journal of Semiconductors

Année:

2010

Langue:

english

Fichier:

PDF, 628 KB

english, 2010

41

[IEEE 2011 IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) - Kaohsiung, Taiwan (2011.02.20-2011.02.23)] 2011 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems - Surface uniform wet etching of ZnO films and influence of oxygen annealing on etching properties

Zhang, Tao, Sun, Lei, Han, Dedong, Wang, Yi, Han, Ruqi

Année:

2011

Langue:

english

Fichier:

PDF, 447 KB

english, 2011

42

Characteristics and mechanism of conduction/set process in TiNâZnOâPt resistance switching random-access memories

Xu, Nuo, Liu, Lifeng, Sun, Xiao, Liu, Xiaoyan, Han, Dedong, Wang, Yi, Han, Ruqi, Kang, Jinfeng, Yu, Bin

Journal:

Applied Physics Letters

Année:

2008

Langue:

english

Fichier:

PDF, 834 KB

english, 2008

43

Time-Dependent Transport in Low-Dimensional Systems—A Numerical Solution Using the Nonequilibrium Green's Functions

He, Yuhui, Hou, Danqiong, Liu, Xiaoyan, Han, Ruqi, Chen, Jie

Journal:

IEEE Transactions on Nanotechnology

Année:

2007

Langue:

english

Fichier:

PDF, 575 KB

english, 2007

44

AC conductance of finite-length carbon nanotubes

He, Yuhui, Hou, Danqiong, Liu, Xiaoyan, Fan, Chun, Han, Ruqi

Journal:

Journal of Physics Condensed Matter

Année:

2006

Langue:

english

Fichier:

PDF, 601 KB

english, 2006

45

Anomalous Negative Bias Temperature Instability Degradation Induced by Source/Drain Bias in Nanoscale PMOS Devices

Baoguang Yan, Jingfeng Yang, Zhiliang Xia, Xiaoyan Liu, Gang Du, Ruqi Han, Jinfeng Kang, C. Liao, Zhenghao Gan, Miao Liao, J. Wang, Waisum Wong

Journal:

IEEE Transactions on Nanotechnology

Année:

2008

Langue:

english

Fichier:

PDF, 111 KB

english, 2008

46

[IEEE 2008 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2008.06.15-2008.06.16)] 2008 IEEE Silicon Nanoelectronics Workshop - Full 3-D simulation of gate line edge roughness impact on sub-30nm FinFETs

Yu, Shimeng, Zhao, Yuning, Song, Yuncheng, Du, Gang, Kang, Jinfeng, Han, Ruqi, Liu, Xiaoyan

Année:

2008

Langue:

english

Fichier:

PDF, 1.45 MB

english, 2008

47

[IEEE 2010 IEEE 3rd International Nanoelectronics Conference (INEC) - Hong Kong, China (2010.01.3-2010.01.8)] 2010 3rd International Nanoelectronics Conference (INEC) - Influence of boundary force on the performance of gate-all-around Ge (110) NW FETs with HfO2 gate insulator

Xu, Honghua, Xiaoyan Liu,, Gang Du,, He, Yuhui, Fan, Chun, Ruqi Han,, Jinfeng Kang,

Année:

2010

Langue:

english

Fichier:

PDF, 175 KB

english, 2010

48

[IEEE 13th International Workshop on Computational Electronics (IWCE) - Beijing, China (2009.05.27-2009.05.29)] 2009 13th International Workshop on Computational Electronics - Radial Boundary Forces-Modulated Valence Band Structure of Ge (110) Nanowire

Xu, Honghua, He, Yuhui, Zhao, Yuning, Du, Gang, Kang, Jinfeng, Han, Ruqi, Liu, Xiaoyan, Fan, Chun

Année:

2009

Langue:

english

Fichier:

PDF, 303 KB

english, 2009

49

[IEEE IEEE Region 10 International Conference on Electrical and Electronic Technology - Singapore (19-22 Aug. 2001)] Proceedings of IEEE Region 10 International Conference on Electrical and Electronic Technology. TENCON 2001 (Cat. No.01CH37239) - A novel sub-50 nm poly-Si gate patterning technology

Shengdong Zhang,, Mansun Chan,, Ruqi Han,, Xiaoyan Liu,, Ting Li,, Dacheng Zhang,

Année:

2001

Langue:

english

Fichier:

PDF, 445 KB

english, 2001

50

[IEEE 6th International Conference on Solid-State and IC Technology - Shanghai, China (22-25 Oct. 2001)] 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) - Fabrication and properties of self-aligned double-gate poly-Si TFT

Shendong Zhang,, Mansun Chan,, Ruqi Han,, Xudong Guan,, Xiaoyan Liu,, Yangyuan Wang,

Année:

2001

Langue:

english

Fichier:

PDF, 246 KB

english, 2001